Charge carrier mediation and ferromagnetism induced in MnBi₆Te₁₀ magnetic topological insulators by antimony doping

Abstract A new kind of intrinsic magnetic topological insulator (MTI) MnBi 2 Te 4 family has shed light on the observation novel quantum effects such as anomalous Hall effect (QAHE). However, strong anti-ferromagnetic (AFM) coupling and high carrier concentration in bulk hinder practical applications. In closely related materials 7 6 10 , interlayer is greatly suppressed by Bi 3 layer intercalation. AFM still ground state these compounds. Here, transport measurements, we demonstrate that a Sb substitutional dopant plays dual role which can not only adjust charge type concentration, but also induces solid into ferromagnetic (FM) state. The region, close to neutral point, be found phase diagram Mn(Sb x 1− ) when ∼ 0.25. An FM-MTI candidate thus demonstrated, may take us step closer realizing high-quality high-temperature QAHE future.